We simulated and adjusted the energy and dose of implant impurity by the aid of silvaco software so as to confine the vt value in a reasonable range and finally we got eligible device samples 最后，我们基于silvaco软件模拟并调节了杂质注入的能量和剂量，并结合实验结果调整了pmos管和nmos管的阈值电压，制备出了合格的bmhmt工作模式的soi异质结mosfet单管。
